Schottky barrier enhancement using reacted Ni2Al3/Ni/n‐GaAs, Ni/Al/Ni/n‐GaAs, and NiAl/Al/Ni/n‐GaAs contacts
نویسندگان
چکیده
منابع مشابه
Carbon nanotube Schottky diodes using Ti-Schottky and Pt-Ohmic contacts for high frequency applications.
We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. To decrease the...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1995
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.359397